RX3G18BGNC16

Référence fabricant #
RX3G18BGNC16
Fabricant
ROHM Semiconductor
Colis/Boîte
-
Fiche technique
Télécharger
Description
NCH 40V 180A, TO-220AB, POWER MO
Stock
2918

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Fabricant :
ROHM Semiconductor
Catégorie de produit :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
180A (Tc)
Drain to Source Voltage (Vdss) :
40 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
168 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
12000 pF @ 20 V
Mounting Type :
Through Hole
Operating Temperature :
150°C (TJ)
Package / Case :
TO-220-3
Power Dissipation (Max) :
125W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
1.64mOhm @ 90A, 10V
Supplier Device Package :
TO-220AB
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Fiches techniques
RX3G18BGNC16

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Offer design support and engineering solutions.

Collaborate with customers to provide customized design assistance and consulting services. Provide engineer training and access to technical resources.

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RX3G07CGNC16 ROHM Semiconductor 827 MOSFET N-CH 40V 70A TO220AB