ISP25DP06NMXTSA1

制造商零件号
ISP25DP06NMXTSA1
制造商
Infineon Technologies
包装/案例
-
数据表
下载
描述
MOSFET P-CH 60V 1.9A SOT223-4
库存
35000

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制造商 :
Infineon Technologies
产品分类 :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
1.9A (Ta)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
420 pF @ 30 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-261-4, TO-261AA
Power Dissipation (Max) :
1.8W (Ta), 4.2W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
250mOhm @ 1.9A, 10V
Supplier Device Package :
PG-SOT223-4
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 270µA
数据列表
ISP25DP06NMXTSA1

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